features * short circuit rated 10us @tc=100 c * high speed switching * low saturation voltage : v ce (sat) = 2.0 v @ ic=30a * high input impedance * co-pak, igbt with frd : trr = 50ns (typ) applications * ac & dc motor controls * general purpose inverters * robotics , servo controls * power supply * lamp ballast absolute maximum ratings notes: ( 1 ) repetitive ratin g : pulse width limited b y max. j unction temperature symbol v ces v ges i c i cm (1) i f i fm p d tsc tj tstg t l characteristics collector-emitter voltage gate-emitter voltage collector current @ tc = 25 c collector current @ tc = 100 c pulsed collector current diode continuous forward current @ tc = 100 c diode maximum forward current maximum power dissipation @tc = 25 c maximum power dissipation @tc = 100 c short circuit withstand time operating junction temperature storage temperature range maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds rating 600 20 48 30 90 25 220 230 90 10 -55 ~ 150 -55 ~ 150 300 units v v a a a a a w w us c c c g c e to-264 co-pak igbt SGL30N60RUFD ? 1999 fairchild semiconductor corporation rev.b
characteristics c - e breakdown voltage temperature coeff. of breakdown voltage g - e threshold voltage collector cutoff current g - e leakage current collector to emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn on delay time turn on rise time turn off delay time turn off fall time turn on switching loss turn off switching loss total switching loss short circuit withstand time total gate charge gate-emitter charge gate-collector charge symbol bv ces d v ces/ d t j v ge(th) i ces i ges v ce (sat) cies coes cres td(on) tr td(off) tf eon eoff ets tsc qg qge qgc min 600 - 5.0 - - - - - - - - - - - - - - 10 - - - typ - 0.6 6.0 - - 2.0 2.4 1810 304 65 18 26 80 80 0.1 0.7 0.8 - 122 28 41 max - - 8.0 250 100 2.7 - - - - - - 110 160 - - 1.5 - 183 42 61 units v v/ c v ua na v v pf pf pf ns ns ns ns mj mj mj us nc nc nc electrical characteristics (igbt part) (t c =25 c,unless otherwise specified) test conditions v ge = 0v , i c = 250ua v ge = 0v , i c = 1ma i c =30ma , v ce = v ge v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v ic=30a, v ge = 15v ic=48a, v ge = 15v v ge = 0v , f = 1mhz v ce = 30v v cc = 300v , i c = 30a v ge = 15v r g = 7 w inductive load vcc = 300v, v ge = 15v @tc = 100 c vcc = 300v v ge = 15v ic = 30a co-pak igbt SGL30N60RUFD
electrical characteristics (diode part) (t c =25 c,unless otherwise specified) min test conditions i f =25a i f =25a, v r =200v -di/dt=200a/us tc =25 c tc =100 c tc =25 c tc =100 c tc =25 c tc =100 c tc =25 c tc =100 c characteristics diode forward volta g e diode reverse recover y time diode peak reverse recover y current diode reverse recover y char g e symbol v fm trr irr qrr min - - - - - - - - typ 1.4 1.3 50 105 4.5 8.5 112 420 max 1.7 - 75 - 10 - 375 - units v ns a nc thermal resistance symbol r q jc r q jc r q ja r q cs characteristics junction-to-case ( igbt ) junction-to-case ( diode ) junction-to-ambient case-to-sink units c/w c/w c/w c/w typ - - - 0.2 max 0.53 0.83 25 - min - - - - co-pak igbt SGL30N60RUFD
fig.1 typical load current vs. frequency fig.2 typical output characteristics fig.3 maximum collector current vs. case temperature fig.4 collector to emitter voltage vs. case temperature 0246810 0 20 40 60 80 100 120 140 160 180 200 tc = 100 & tc = 25 & ic [a ] vce [v] 20 40 60 80 100 120 140 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 ic = 30a ic = 48a vce(sat) [v] tc [ & ] 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 vge = 15v tc [ & ] max dc current [a] 0 8 16 24 32 40 0.1 1 10 100 1000 duty cycle : 50% tc = 100 & power dissipation = 45w vcc = 300v load current : peak of square wave frequenc y [khz] load current [a] co-pak igbt SGL30N60RUFD
fig.5 maximum effective transient thermal impedance, junction to case fig.6 typical capacitance vs. collector to emitter voltage fig.7 typical gate charge vs. gate to emitter voltage 110 0 500 1000 1500 2000 2500 3000 cres coes ci es capacitance [pf] vce [v] 0 20 40 60 80 100 120 140 0 4 8 12 16 20 vcc = 300v ic = 30a v ge [v] qg [nc] 0.00001 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] pdm t1 t2 dut y factor d = t1 / t2 peak t j = pdm x zth j c + tc co-pak igbt SGL30N60RUFD
fig.8 typical switching loss vs. gate resistance fig.9 typical switching loss vs. case temperature fig.10 typical switching loss vs. collector to emitter current fig.11 turn-off soa 20 30 40 50 60 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 vcc = 300v rg =7 w tc = 100 & eon eoff esw energy [mj] ic [a ] 20 40 60 80 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 vcc = 300v rg =7 w vge = 15v ic =15a ic =30a ic =60a energy [mj] tc [ & ] 0 20406080 0 200 400 600 800 1000 1200 1400 1600 1800 2000 vcc = 300v ic = 30a esw eon eoff energy [uj] rg [ + ] 1 10 100 1000 1 10 100 safe operating area vge = 20v, tc = 100 & ic [a ] vce [v] co-pak igbt SGL30N60RUFD
fig.12 typical forward voltage drop vs. forward current fig.13 typical reverse recovery time vs. di/dt fig.14 typical reverse recovery current vs. di/dt fig.15 typical stored charge vs. di/dt 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 tc = 100 & tc = 25 & forward voltage drop v f [v] forward current i f [a] 100 1000 20 40 60 80 100 120 v r = 200v i f = 25a tc = 25 & tc = 100 & trr - [ns] -di/dt [a/us] 100 1000 1 10 100 v r = 200v i f = 25a tc = 100 & tc = 25 & i rr - [a] -di/dt [a/us] 100 1000 0 200 400 600 800 1000 v r = 200v i f = 25a tc = 25 & tc = 100 & qrr [nc] -di/dt [a/us] co-pak igbt SGL30N60RUFD
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